Dramatic improvement of high-k gate dielectric reliability by using mono-layer graphene gate electrode

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 31-32

  Park, Jong Kyung ^a   Song, Seung Min ^a   Mun, Jeong Hun ^a   Cho, Byung Jin ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; CHARGE TRAP FLASH MEMORIES; DATA RETENTION; GATE ELECTRODES; HIGH-K GATE DIELECTRICS; MECHANICAL STRESS; METAL GATE ELECTRODES; MOS-FET; PROGRAM/ERASE; TRAP GENERATION;

DIELECTRIC DEVICES; FLASH MEMORY; GRAPHENE; RELIABILITY; STRESSES;

ELECTRIC PROPERTIES;

EID: 84866559838     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242446     Document Type: Conference Paper

References (4)

1. R. Balog et al., Nature Materials 9 (2006), p. 315.
2. J.K. Park et al, Nano Letters, 11 (2011) p. 5383
3. K.S. Kim et al., Nature 457 (2009) p. 706.
4. S.M. Song et al, Nanotechnology, vol. 21, p.335706 (2010).