Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 99-100

  Gong, Xiao ^a   Su, Shaojian ^b   Liu, Bin ^a   Wang, Lanxiang ^a   Wang, Wei ^a   Yang, Yue ^a   Kong, Eugene ^a   Cheng, Buwen ^b   Han, Genquan ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMMON GATES; DRIVE CURRENTS; GATE LEAKAGES; GATE LENGTH; GATE STACKS; INTRINSIC TRANSCONDUCTANCE; METAL GATE; NMOSFET; PMOSFET; SHORT-CHANNEL DEVICES;

GALLIUM; GERMANIUM; MOSFET DEVICES; PASSIVATION; SILICON; TANTALUM COMPOUNDS; TIN;

LOGIC GATES;

EID: 84866547608     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242480     Document Type: Conference Paper

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