Hole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs

Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998

Volumn 1998-October, Issue , 1998, Pages 198-201

  Sano, N ^a   Fischetti, M V ^b   Laux, S E ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; IONIC CONDUCTION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SI-GE ALLOYS;

AB INITIO; AND SPLITS; ENERGY SPLITTINGS; IN0.53GA0.47AS; IONIZATION TRANSITIONS; LOCAL PSEUDOPOTENTIALS; NONLOCAL; SPIN ORBIT INTERACTIONS;

IMPACT IONIZATION;

EID: 84866537251     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.1998.742746     Document Type: Conference Paper

References (8)

1. The present understanding of ionization phenomena in semiconductors is summarized along with high-field carrier transport in M. V. Fischetti, N. Sano, S. E. Laux, and K. Natori, IEEE Journal of T-CAD [http://tcad.stanford.edu/tcad-journal/papers/fischetti96/SISPAD96.html] (1997).
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