3C-SiC(001)-3 × 2 reconstructed surface analyzed by high-resolution medium energy ion scattering

Surface Science

Volumn 606, Issue 23-24, 2012, Pages 1942-1947

  Matsuda, T ^a   Tagami, M ^a   Mitsuhara, K ^a   Visikovskiy, A ^a   Shibuya, M ^a   Kido, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

3C SiC(001) 3 2 surface; Ab initio calculations; Medium energy ion scattering (MEIS)

Indexed keywords

AB INITIO CALCULATIONS; ADLAYERS; ASYMMETRIC DIMERS; FIRST PRINCIPLE CALCULATIONS; GRAZING-INCIDENCE X-RAY DIFFRACTION; HIGH RESOLUTION; INTERPLANAR DISTANCE; MEDIUM ENERGY ION SCATTERING; PHOTOELECTRON DIFFRACTION; RECONSTRUCTED SURFACES; VIENNA AB-INITIO SIMULATION PACKAGES;

CALCULATIONS; SILICON CARBIDE; X RAY DIFFRACTION;

SILICON;

EID: 84866414015     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2012.08.021     Document Type: Article

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