Reactive sputter deposition of pyrite structure transition metal disulfide thin films: Microstructure, transport, and magnetism

Journal of Applied Physics

Volumn 112, Issue 5, 2012, Pages

  Baruth, A ^a,b   Manno, M ^a   Narasimhan, D ^a   Shankar, A ^a   Zhang, X ^a   Johnson, M ^a   Aydil, E S ^a   Leighton, C ^a  

^a University of Minnesota   (United States)

^b CREIGHTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETICS; CONDUCTION MECHANISM; CRITICAL ISSUES; DEPOSITION TECHNIQUE; DEPOSITION TEMPERATURES; DIAMAGNETIC SEMICONDUCTORS; DOPING LEVELS; EX SITU; FUNCTIONAL PROPERTIES; HIGH QUALITY; METAL DISULFIDE; METAL FILM; METALLIC TARGETS; OPTIMAL PARAMETER; PLASMA OPTICAL EMISSION SPECTROSCOPY; POLYCRYSTALLINE; PRESSURE RATIO; REACTIVE SPUTTER DEPOSITION; SEMI-CONDUCTION; SOLAR-CELL APPLICATIONS; SPIN-POLARIZED; SPUTTERING CONDITIONS; STRUCTURE TRANSITIONS; SULFIDATION; TEST CASE; THIOSPINELS; WORKING GAS PRESSURE;

ANTIFERROMAGNETISM; EMISSION SPECTROSCOPY; FERROMAGNETISM; FUNCTIONAL ELECTRIC STIMULATION; OPTIMIZATION; PLASMA DEPOSITION; SEMICONDUCTOR DOPING; SULFUR COMPOUNDS; THIN FILMS; TRANSITION METAL COMPOUNDS; TRANSITION METALS; VAPOR DEPOSITION;

DEPOSITION;

EID: 84866369069     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4751358     Document Type: Conference Paper

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