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Volumn 101, Issue 11, 2012, Pages

Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC STRUCTURE; GEOMETRY DESIGNS; INTERFACIAL THERMAL RESISTANCE; KAPITZA RESISTANCE; LANDAUER; PHONON ENGINEERING; PHONON TRANSPORT; THERMAL TRANSMITTANCE; VERTICAL COUPLING; WURTZITES;

EID: 84866307416     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4752437     Document Type: Article
Times cited : (54)

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    • All the calculations are performed in the framework of DFT as it is implemented in QUANTUM-ESPRESSO package [P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, J. Phys.: Condens. Matter 21, 395502 (2009)]. We used LDA norm-conserving pseudopotentials for all the atomic species, a 65 Ry energy cut off in the plane wave expansion and a 12 × 12 × 2 and 6 × 6 × 1 regular k-point mesh for G/h-BN and G/SiC, respectively. Four q-points have been used in the direction of transport for the interfacial thermal resistance calculations. 10.1088/0953-8984/21/39/395502
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    • Giannozzi, P.1    Baroni, S.2    Bonini, N.3    Calandra, M.4    Car, R.5    Cavazzoni, C.6    Ceresoli, D.7    Chiarotti, G.L.8    Cococcioni, M.9    Dabo, I.10
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    • See supplementary material at http://dx.doi.org/10.1063/1.4752437 E-APPLAB-101-084238 for schematic diagram of an interface between two semiinfinite leads (Fig. S1); for bulk and interface structures (Figs. S2 and S3); and for bulk BN, G, and SiC characterization (Figs. S4-S6).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.