Morphology transitions in ZnO nanorods grown by MOCVD

Journal of Crystal Growth

Volumn 359, Issue 1, 2012, Pages 122-128

  Montenegro, D N ^a   Souissi, A ^b   Martinez Tomas C ^a   Munoz Sanjose V ^a   Sallet, V ^b  

^a UNIVERSITY OF VALENCIA   (Spain)

^b LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

Author keywords

A1. Growth models; A1. Nanostructures; A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Zinc compounds; B2. Semiconducting materials

Indexed keywords

C-SAPPHIRE; CARRIER GAS; GASPHASE; GROWTH CONDITIONS; GROWTH MECHANISMS; GROWTH MODELS; MORPHOLOGY TRANSITIONS; NITROUS OXIDE; OXYGEN SOURCES; PRECURSOR PARTIAL PRESSURE; SEMICONDUCTING MATERIALS; SYSTEMATIC STUDY; VERTICAL ALIGNMENT; ZNO NANOROD; ZNO NANOROD ARRAYS; ZNO NANOSTRUCTURES;

ASPECT RATIO; HELIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITROGEN OXIDES; SAPPHIRE; VAPORS; X RAY DIFFRACTION; ZINC COMPOUNDS; ZINC OXIDE;

NANORODS;

EID: 84866181955     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.08.038     Document Type: Article

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