The effect of interfaces on magnetic activation volumes in single crystal Co 2FeSi Heusler alloy thin films

Applied Physics Letters

Volumn 101, Issue 10, 2012, Pages

  Sagar, J ^a   Sukegawa, H ^b   Lari, L ^a   Lazarov, V K ^a   Mitani, S ^b   O'Grady, K ^a   Hirohata, A ^a,c  

^a UNIVERSITY OF YORK   (United Kingdom)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION VOLUME; HEUSLER ALLOYS; MAGNETIC ACTIVATION; MGO; PHYSICAL STRUCTURES; TUNNEL MAGNETORESISTANCE;

CERIUM ALLOYS; ELECTRIC RESISTANCE; GIANT MAGNETORESISTANCE; KINETIC THEORY; MAGNETIC MATERIALS; MAGNETIZATION REVERSAL; SINGLE CRYSTALS; THIN FILMS;

CARBON DIOXIDE;

EID: 84866049063     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4749822     Document Type: Article

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