Quantum chemical study of fluorinated AlN nano-cage

Applied Surface Science

Volumn 259, Issue , 2012, Pages 631-636

  Beheshtian, Javad ^a   Peyghan, Ali Ahmadi ^b   Bagheri, Zargham ^b  

^a SHAHID RAJAEE TEACHER TRAINING UNIVERSITY   (Iran)

^b ISLAMIC AZAD UNIVERSITY   (Iran)

Author keywords

Ab initio; Aluminum nitride nanocluster; Electronic properties; Semiconductors

Indexed keywords

ALUMINUM NITRIDE; ATOMS; DENSITY FUNCTIONAL THEORY; ELECTRON EMISSION; ELECTRONIC PROPERTIES; FREE ENERGY; GIBBS FREE ENERGY; III-V SEMICONDUCTORS; NANOCLUSTERS; QUANTUM CHEMISTRY; SEMICONDUCTOR MATERIALS; WIDE BAND GAP SEMICONDUCTORS;

AB INITIO; ENTHALPY CHANGE; GIBBS FREE ENERGY CHANGES; INTRINSIC SEMICONDUCTORS; LOWER ENERGIES; P-TYPE; POTENTIAL BARRIERS; QUANTUM CHEMICAL STUDIES;

NITROGEN COMPOUNDS;

EID: 84866009489     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.07.088     Document Type: Article

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