Waveguide-Fed SiGe Avalanche pin Photodetector Grown on SOI Substrate with 0.2A/W External Responsivity at 1.3μm

Optics InfoBase Conference Papers

Volumn , Issue , 1998, Pages 285-288

  Yoshimoto, T ^a,b   Thomas, S ^a   Wang, K L ^a   Jalali, B ^a  

^a Engineering IV   (United States)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL FIBER COMMUNICATION; OPTICAL FIBERS; PHOTODETECTORS; PHOTONS; WAVEGUIDES;

ABSORPTION REGION; AVALANCHE PHOTODETECTORS; P-I-N PHOTODETECTORS; PASSIVE WAVEGUIDES; RESPONSIVITY; SILICON ON INSULATOR;

SI-GE ALLOYS;

EID: 84865900429     PISSN: None     EISSN: 21622701     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Luryi, T. P. Pearsall, H. Temkin, and J. C. Beam, "Waveguide infrared photodetector on a silicon chip, " IEEE Electron Device Lett., vol. 7, pp. 104-107, 1986.
2. A. V. P. Kesan, P. G. May, E. Bassous, and S. S. Iyer, "Integrated waveguide-photodetector using Si/SiGe multiple quantum wells for long wavelength applications, " in Proc. IEDM, San Francisco, CA, 1990, pp. 26.7.1-4.
3. B. Jalali, L. Naval, and A. F. Levi, J. Lightwave Technol., "Silicon-based receivers for optical data links, " vol. 12, pp. 930-935, June 1994.
4. A. Splett and K. Petermann, "Ultimate performance of SiGe/Si multiquantum well waveguidephotodetector combinations, " in ECOC94. 20th European Conf. Optic. Commun., Firenze, Italy, Sept. 25-29, 1994, vol. 2., pp. 861-4.