Analysis of gain-switching characteristics including strong gain saturation effects in low-dimensional semiconductor lasers

Japanese Journal of Applied Physics

Volumn 51, Issue 9, 2012, Pages

  Chen, Shaoqiang ^a   Yoshita, Masahiro ^a,b   Ito, Takashi ^a   Mochizuki, Toshimitsu ^a   Akiyama, Hidefumi ^a   Yokoyama, Hiroyuki ^b   Kamide, Kenji ^c   Ogawa, Tetsuo ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY LIFETIMES; DELAY TIME; DIFFERENT EFFECTS; DIFFERENTIAL GAIN; GAIN COMPRESSION FACTOR; GAIN NONLINEARITIES; GAIN SATURATION; GAIN SWITCHING; GAIN-SWITCHED; LOW-DIMENSIONAL SEMICONDUCTORS; MATERIAL GAIN; NON-LINEARITY; PHOTON DENSITIES; PULSE GENERATION; PULSEWIDTHS; RATE EQUATIONS; TEMPORAL EVOLUTION;

CARRIER CONCENTRATION; PULSE GENERATORS;

SEMICONDUCTOR LASERS;

EID: 84865845575     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.098001     Document Type: Article

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