Thermoelectric properties of Ba 8Ga 16Ge 30 with TiO 2 nanoinclusions

Journal of Applied Physics

Volumn 112, Issue 4, 2012, Pages

  Heijl, R ^a   Cederkrantz, D ^a   Nygren, M ^b   Palmqvist, A E C ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b STOCKHOLM UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONTRIBUTION; ELECTRICAL RESISTIVITY; MAXIMUM VALUES; NANO INCLUSION; PEAK VALUES; SEMICONDUCTOR MATRICES; THERMOELECTRIC PROPERTIES; TIO; TRANSIENT PLANE SOURCE TECHNIQUES;

ELECTRIC CONDUCTIVITY; GALLIUM; GERMANIUM; HYDRATES; NANOPARTICLES; SEMICONDUCTOR DOPING; TITANIUM DIOXIDE;

THERMAL CONDUCTIVITY;

EID: 84865836815     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4748152     Document Type: Article

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