Optical band gap of semiconductive type II Si clathrate purified by centrifugation

Journal of Non-Crystalline Solids

Volumn 358, Issue 17, 2012, Pages 2138-2140

  Himeno, Roto ^a   Ohashi, Fumitaka ^a   Kume, Tetsuji ^a   Asai, Erika ^a   Ban, Takayuki ^a   Suzuki, Takatoshi ^a   Iida, Tamio ^b   Habuchi, Hitoe ^b   Tsutsumi, Yasuo ^c   Natsuhara, Hironori ^a   Nonomura, Shuichi ^a  

^a GIFU UNIVERSITY   (Japan)

^b GIFU NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Band gap; Diffuse reflection spectroscopy; Optical absorption; Si clathrate

Indexed keywords

CLATHRATES; DIFFUSE REFLECTION; DIFFUSE REFLECTION SPECTROSCOPY; FREE CARRIER ABSORPTION; FUNDAMENTAL ABSORPTION EDGE; HIGH PURITY; INFRARED REGIONS; NA CONTENT; SEMICONDUCTIVE; SI-BASED MATERIALS; TYPE II; TYPE II STRUCTURES; VISIBLE REGION;

CENTRIFUGATION; DECOMPOSITION; ENERGY GAP; HYDRATES; LIGHT ABSORPTION; OPTICAL PROPERTIES; PURIFICATION; REMOVAL; SODIUM;

SILICON;

EID: 84865783311     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2011.12.064     Document Type: Conference Paper

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