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Journal of Non-Crystalline Solids

Volumn 358, Issue 17, 2012, Pages 2000-2003

Low temperature plasma deposition of silicon thin films: From amorphous to crystalline

(3) Roca I Cabarrocas, P a Cariou, R a Labrune, M a,b

a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

b TOTAL (France)

Author keywords

Low temperature epitaxy; PECVD; Silicon; Silicon nanocrystals; Substrate selectivity

Indexed keywords

BUILDING BLOCKES; CRYSTALLINE SILICON FILMS; CRYSTALLINE SILICON SUBSTRATES; CRYSTALLINE SILICON THIN FILMS; DEPOSITION PROCESS; FOREIGN SUBSTRATES; LOW COSTS; LOW TEMPERATURE EPITAXIES; LOW TEMPERATURE PLASMA DEPOSITION; PLASMA SYNTHESIS; SILICON NANOCRYSTALS; SILICON THIN FILM; SUBSTRATE SELECTIVITY;

CRYSTALLINE MATERIALS; DEPOSITION; EPITAXIAL GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON WAFERS; TEMPERATURE; THIN FILMS; VAPOR DEPOSITION;

AMORPHOUS SILICON;

EID: 84865762476 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2011.12.113 Document Type: Conference Paper

Times cited : (35)

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