Radiation effects on CMOS image sensors with sub-2 μ m pinned photodiodes

IEEE Transactions on Nuclear Science

Volumn 59, Issue 4 PART 1, 2012, Pages 909-917

  Place, S ^a,b   Carrere, J P ^a   Allegret, S ^a   Magnan, P ^b   Goiffon, V ^b   Roy, F ^a  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

Activation energy; APS; CMOS 4T image sensor; dark current; irradiation; pinned photodiode; temporal noise

Indexed keywords

APPLICATION FIELDS; APS; BURIED OXIDES; CMOS IMAGE SENSOR; COMMERCIAL SENSORS; KEY PARAMETERS; PERFORMANCE DEGRADATION; PHENOMENOLOGICAL MODELS; TEMPORAL NOISE; TEMPORAL NOISE ANALYSIS;

ACTIVATION ENERGY; DARK CURRENTS; DEGRADATION; DIGITAL CAMERAS; DIODES; IRRADIATION; PHOTODIODES;

PIXELS;

EID: 84865353756     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2012.2193671     Document Type: Article

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