Influence of annealing atmospheres and synthetic air treatment on solution processed zinc oxide thin film transistors

Journal of Applied Physics

Volumn 112, Issue 3, 2012, Pages

  Busch, C ^a   Schierning, G ^a   Theissmann, R ^a   Schmechel, R ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION MODES; ACTIVE LAYER; ANNEALING ATMOSPHERES; ANNEALING CONDITION; ANNEALING GAS; DEFECT STATE; DENSITY OF STATE; DEPLETION MODES; DEVICE PROPERTIES; DISTRIBUTION PARAMETERS; DONOR STATE; GAS TREATMENT; HOPPING TRANSPORT; SHALLOW DONORS; SOLUTION PROCESS; SOLUTION-PROCESSED; SYNTHETIC AIR; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS; TRANSISTOR MODEL; ZINC OXIDE THIN FILMS; ZNO;

ANNEALING; CHARGE TRANSFER; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

TRANSISTORS;

EID: 84865206824     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4742976     Document Type: Article

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