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Volumn 22, Issue 35, 2012, Pages 18119-18123

High throughput theory and simulation of nanomaterials: Exploring the stability and electronic properties of nanographene

(3) Shi, Hongqing a Barnard, A S b Snook, Ian K a

a RMIT UNIVERSITY (Australia)

b CSIRO (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LEVELS; ATOMIC-LEVEL RESOLUTION; COMBINATORIAL APPROACH; CONFIGURATION SPACE; HIGH THROUGHPUT; NANO-SCALE MATERIALS; STRUCTURE PROPERTY RELATIONSHIPS; STRUCTURE SIMULATIONS; VIRTUAL EXPERIMENTS;

ELECTRONIC STRUCTURE; EXPERIMENTS; GRAPHENE; NANOSTRUCTURED MATERIALS; VIRTUAL REALITY;

ELECTRONIC PROPERTIES;

EID: 84865046492 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm32618c Document Type: Article

Times cited : (22)

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