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Volumn 135, Issue 2-3, 2012, Pages 287-292
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Characterization of the ZnS thin film buffer layer for Cu(In, Ga)Se 2 solar cells deposited by chemical bath deposition process with different solution concentrations
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Author keywords
Band gap; Chemical bath deposition (CBD); Cu(In Ga)Se 2 solar cell; Optical properties; Solution concentration; ZnS thin films
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Indexed keywords
ABSORPTION COEFFICIENTS;
BATH TEMPERATURES;
CHEMICAL BATH DEPOSITION PROCESS;
CHEMICAL-BATH DEPOSITION;
COATED GLASS;
CU(IN , GA)SE;
OPTIMAL CONCENTRATION;
SOLUTION CONCENTRATION;
ZINC SULFATE;
ZNS FILMS;
ZNS THIN FILMS;
AMMONIA;
BUFFER LAYERS;
DEPOSITION;
ENERGY GAP;
GALLIUM;
HYDRATES;
INDICATORS (CHEMICAL);
ITO GLASS;
OPTICAL PROPERTIES;
SOLAR CELLS;
THIN FILMS;
THIOUREAS;
VAPOR DEPOSITION;
ZINC SULFIDE;
SEMICONDUCTING SELENIUM COMPOUNDS;
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EID: 84864674523
PISSN: 02540584
EISSN: None
Source Type: Journal
DOI: 10.1016/j.matchemphys.2012.03.090 Document Type: Article |
Times cited : (49)
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References (21)
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