O 2-exposure and light-irradiation properties of picene thin film field-effect transistor: A new way toward O 2 gas sensor

Sensors and Actuators, B: Chemical

Volumn 171-172, Issue , 2012, Pages 544-549

  Sugawara, Yasuyuki ^a   Ogawa, Keiko ^b   Goto, Hidenori ^b   Oikawa, Shuhei ^a   Akaike, Kouki ^b   Komura, Noriko ^b   Eguchi, Ritsuko ^b   Kaji, Yumiko ^b   Gohda, Shin ^c   Kubozono, Yoshihiro ^b  

^a Kuramoto Co Ltd   (Japan)

^b OKAYAMA UNIVERSITY   (Japan)

^c NARD Co Ltd   (Japan)

Author keywords

Light irradiation; O 2 gas sensor; Organic thin film FET; Picene; Pulse bias application

Indexed keywords

BIAS STRESS; GAS SENSING; GAS SENSING PROPERTIES; GATE VOLTAGES; LIGHT IRRADIATIONS; LOW VOLTAGE OPERATION; ORGANIC THIN FILMS; PICENE; SENSING MECHANISM; SENSING PROPERTY; TIO; TRANSISTOR CHARACTERISTICS;

BIAS VOLTAGE; CHEMICAL DETECTION; FIELD EFFECT TRANSISTORS; GAS SENSING ELECTRODES; GATE DIELECTRICS; HAFNIUM OXIDES; IRRADIATION; TANTALUM OXIDES; THIN FILMS;

GAS DETECTORS;

EID: 84864283800     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.05.030     Document Type: Article

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