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Volumn , Issue , 2012, Pages 243-250

Short-circuit ruggedness of high-voltage IGBTs

Author keywords

[No Author keywords available]

Indexed keywords

DESTRUCTIVE MEASUREMENTS; FAILURE PATTERNS; FILAMENT FORMATION; GATE DRIVES; HIGH-VOLTAGES; PARASITIC ELEMENT; SHORT-CIRCUIT CONDITIONS; SHORT-CIRCUIT PROTECTION;

EID: 84864208527     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2012.6222845     Document Type: Conference Paper
Times cited : (49)

References (19)
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    • Eckel, H.-G.1    Sack, L.2
  • 3
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    • Short circuit behavior of IGBT's correlated to the intrinsic device structure and on the application circuit
    • March/April
    • R. Letor and G. C. Aniceto, "Short Circuit Behavior of IGBT's Correlated to the Intrinsic Device Structure and on the Application Circuit," IEEE Transactions on Industry Applications, Vol. 31, No. 2, March/April, 1995.
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    • Letor, R.1    Aniceto, G.C.2
  • 4
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    • Experimental behavior of single-chip IGBT and COOLMOS devices under repetetive short-circuit conditions
    • S. Lefebvre, Z. Khatir and F. Saint-Eve, "Experimental behavior of single-chip IGBT and COOLMOS devices under repetetive short-circuit conditions," IEEE Transactions on Electron Devices, vol. 52, no. 2, pp. 276-283, 2005.
    • (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.2 , pp. 276-283
    • Lefebvre, S.1    Khatir, Z.2    Saint-Eve, F.3
  • 7
    • 0036444586 scopus 로고    scopus 로고
    • Investigation of gate voltage oscillations in an IGBT module under short circuit conditions
    • T. Ohi, A. Iwata and K. Arai, "Investigation of Gate Voltage Oscillations in an IGBT Module under Short Circuit Conditions," Proceedings of the Power Electronics Specialists Conference, pp. 1758-1763, 2002.
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    • Ohi, T.1    Iwata, A.2    Arai, K.3
  • 9
    • 0032141248 scopus 로고    scopus 로고
    • Zero voltage switching behavior of punchthrough and nonpunchthrough insulated gate bipolar transistors (IGBT's)
    • S. Pendharkar and K. Shenai, "Zero Voltage Switching Behavior of Punchthrough and Nonpunchthrough Insulated Gate Bipolar Transistors (IGBT's)," IEEE Trans. Electron Devices, vol. Issue 8, pp. 1826-1835, 1998.
    • (1998) IEEE Trans. Electron Devices , Issue.8 , pp. 1826-1835
    • Pendharkar, S.1    Shenai, K.2
  • 12
    • 80053466193 scopus 로고    scopus 로고
    • The influence of asymmetries on the parallel connection of IGBT chips under short-circuit condition
    • T. Basler, J. Lutz, R. Jakob and T. Brückner, "The Influence of Asymmetries on the Parallel Connection of IGBT Chips under Short-Circuit Condition," Proceedings of the EPE, Birmingham, 2011.
    • (2011) Proceedings of the EPE, Birmingham
    • Basler, T.1    Lutz, J.2    Jakob, R.3    Brückner, T.4
  • 13
    • 0036958052 scopus 로고    scopus 로고
    • Parallel strings of IGBTs in short circuit transients: Analysis of the parameter influence and experimental behavior
    • S. Musumeci, R. Pagano, A. Raciti, F. Frisina and M. Melito, "Parallel Strings of IGBTs in Short Circuit Transients: Analysis of the Parameter Influence and Experimental Behavior," IECON, 2002.
    • (2002) IECON
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  • 14
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    • A 2000V non-punchthrough IGBT with high ruggedness
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    • (1992) Solid-St. Electrn , vol.35 , Issue.5 , pp. 681-685
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  • 16
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    • A planar-gate high-conductivity IGBT (HiGT) with hole-barrier layer
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  • 17
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    • Failure mechanism of trench IGBT under short-circuit after turn-off
    • A. Benmansour, S. Azzopardi, J. Martin and Woirgard, "Failure mechanism of Trench IGBT under short-circuit after turn-off," Microelectronics Reliability vol. 46, pp. 1700-1705, 2006.
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    • Benmansour, A.1    Azzopardi, S.2    Martin, J.3    Woirgard4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.