An efficient resonant gate-drive scheme for high-frequency applications

IEEE Transactions on Industry Applications

Volumn 48, Issue 4, 2012, Pages 1418-1431

  Swamy, Mahesh M ^a   Kume, Tsuneo ^b   Takada, Noriyuki ^b  

^a Yaskawa Electric America Inc   (United States)

^b YASKAWA ELECTRIC CORPORATION   (Japan)

Author keywords

Gate drive circuit; gate drive power loss; high frequency gate drive circuits; resonant gate drive circuit; SiC GaN gate drivers

Indexed keywords

GATE DRIVE CIRCUITS; GATE DRIVERS; GATE DRIVES; HIGH FREQUENCY; HIGH TEMPERATURE; HIGH VOLTAGE; HIGH-FREQUENCY APPLICATIONS; HIGH-FREQUENCY SWITCHING; HIGH-POWER; MOTOR DRIVE; POWER-LOSSES; RESONANT GATE DRIVE; SWITCHING SPEED;

DEGRADATION; GALLIUM NITRIDE;

SILICON CARBIDE;

EID: 84864195094     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2012.2200227     Document Type: Article

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