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Volumn 520, Issue 20, 2012, Pages 6361-6367

Structural, optical and electrical properties of high-k ZrO 2 dielectrics on Si prepared by plasma assisted pulsed laser deposition

(8) Zhang, W a Cui, Y a Hu, Z G b Yu, W L b Sun, J a Xu, N a Ying, Z F a Wu, J D a

a FUDAN UNIVERSITY (China)

b EAST CHINA NORMAL UNIVERSITY (China)

Author keywords

Annealing; Dielectric property; Interfacial property; Optical property; Plasma assisted pulsed laser deposition; Structural property; Zirconia

Indexed keywords

C-V HYSTERESIS; CAPACITANCE VOLTAGE; CURRENT DENSITY-VOLTAGE CHARACTERISTICS; DIELECTRIC LAYER; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; EQUIVALENT OXIDE THICKNESS; GATE VOLTAGES; INTERFACIAL PROPERTY; J-V CHARACTERISTICS; LEAKAGE PATHS; METAL OXIDES; MONOCLINIC PHASE; OPTICAL AND ELECTRICAL PROPERTIES; P-TYPE SI; PLASMA-ASSISTED PULSED LASER DEPOSITION; POLYCRYSTALLINE STRUCTURE; STRUCTURAL AND OPTICAL PROPERTIES; THERMAL-ANNEALING;

ANNEALING; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; METALLIC COMPOUNDS; MOS CAPACITORS; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON; SILICON; SILICON OXIDES; STRUCTURAL PROPERTIES; ZIRCONIA;

ZIRCONIUM ALLOYS;

EID: 84863984335 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.06.042 Document Type: Article

Times cited : (40)

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