Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts

Applied Physics Letters

Volumn 101, Issue 2, 2012, Pages

  Jeon, Kun Rok ^a   Min, Byoung Chul ^b   Park, Youn Ho ^b   Jo, Young Hun ^c   Park, Seung Young ^c   Park, Chang Yup ^a   Shin, Sung Chul ^a,d  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

^d Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS DEPENDENCE; FERROMAGNETIC ELECTRODES; FERROMAGNETS; HANLE EFFECTS; INTERFACIAL ROUGHNESS; INTERFACIAL SPINS; LOCAL FIELDS; LOCAL MAGNETIC FIELD; MODEL CALCULATIONS; SPIN PRECESSION; SPIN RELAXATION; SPIN-RELAXATION RATES;

DEPOLARIZATION; FERROMAGNETIC MATERIALS; FERROMAGNETISM;

SUPERCONDUCTING FILMS;

EID: 84863971022     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4733478     Document Type: Article

References (31)

1. X. Lou, C. Adelmann, M. Furis, S. A. Crooker, C. J. Palmstrom, and P. A. Crowell, Phys. Rev. Lett. 96, 176603 (2006). 10.1103/PhysRevLett.96.176603
2. S. P. Dash, S. Sharma, R. S. Patel, M. P. de Jong, and R. Jansen, Nature (London) 462, 491 (2009). 10.1038/nature08570
3. R. Jansen, B. C. Min, S. P. Dash, S. Sharma, G. Kioseoglou, A. T. Hanbicki, O. M. J. van't Erve, P. E. Thompson, and B. T. Jonker, Phys. Rev. B 82, 241305(R) (2010). 10.1103/PhysRevB.82.241305
4. C. H. Li, O. M. J. vant Erve, and B. T. Jonker, Nat. Commun. 2, 245 (2011). 10.1038/ncomms1256
5. N. W. Gray and A. Tiwari, Appl. Phys. Lett. 98, 102112 (2011). 10.1063/1.3564889
6. K.-R. Jeon, B.-C. Min, I.-J. Shin, C.-Y. Park, H.-S. Lee, Y.-H. Jo, and S.-C. Shin, Appl. Phys. Lett. 98, 262102 (2011). 10.1063/1.3600787
7. Y. Ando, K. Kasahara, K. Yamane, Y. Baba, Y. Maeda, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya, Appl. Phys. Lett. 99, 012113 (2011). 10.1063/1.3607480
8. H. Saito, S. Watanabe, Y. Mineno, S. Sharma, R. Jansen, S. Yuasa, and K. Ando, Solid State Commun. 151, 1159 (2011). 10.1016/j.ssc.2011.05.010
9. K.-R. Jeon, B.-C. Min, Y.-H. Jo, H.-S. Lee, I.-J. Shin, C.-Y. Park, S.-Y. Park, and S.-C. Shin, Phys. Rev. B 84, 165315 (2011). 10.1103/PhysRevB.84. 165315
10. K.-R. Jeon, B.-C. Min, Y.-H. Park, H.-S. Lee, C.-Y. Park, Y.-H. Jo, and S.-C. Shin, Appl. Phys. Lett. 99, 162106 (2011). 10.1063/1.3648107
11. A. Jain, L. Louahadj, J. Peiro, J. C. Le Breton, C. Vergnaud, A. Barski, C. Beigné, L. Notin, A. Marty, V. Baltz, S. Auffret, E. Augendre, H. Jaffrès, J. M. George, and M. Jamet, Appl. Phys. Lett. 99, 162102 (2011). 10.1063/1.3652757
12. K. Kasahara, Y. Baba, K. Yamane, Y. Ando, S. Yamada, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya, J. Appl. Phys. 111, 07C503 (2012). 10.1063/1.3670985
13. A. T. Hanbicki, S. F. Cheng, R. Goswami, O. M. J. van't Erve, and B. T. Jonker, Solid State Commun. 152, 244 (2011). 10.1016/j.ssc.2011.11.033
14. M. Johnson and R. H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985). 10.1103/PhysRevLett.55.1790
15. M. Johnson and R. H. Silsbee, Phys. Rev. B 37, 5326 (1988). 10.1103/PhysRevB.37.5326
16. M. Tran, H. Jaffrès, C. Deranlot, J.-M. George, A. Fert, A. Miard, and A. Lemaître, Phys. Rev. Lett. 102, 036601 (2009). 10.1103/PhysRevLett.102.036601
17. S. P. Dash, S. Sharma, J. C. Le Breton, H. Jaffrès, J. Peiro, J.-M. George, A. Lemaitre, and R. Jansen, Phys. Rev. B 84, 054410 (2011). 10.1103/PhysRevB.84.054410
18. See supplementary material at http://dx.doi.org/10.1063/1.4733478 E-APPLAB-101-082228 for the analysis on the bias dependence of normal and inverted Hanle effects.
19. K.-R. Jeon, C.-Y. Park, and S.-C. Shin, Cryst. Growth Des. 10, 1346 (2010). 10.1021/cg901380b
20. R. S. Patel, S. P. Dash, M. P. de Jong, and R. Jansen, J. Appl. Phys. 106, 016107 (2009). 10.1063/1.3159638
21. C. Gould, C. Ruster, T. Jungwirth, E. Girgis, G. M. Schott, R. Giraud, K. Brunner, G. Schmidt, and L. W. Molenkamp, Phys. Rev. Lett. 93, 117203 (2004). 10.1103/PhysRevLett.93.117203
22. H. Saito, S. Yuasa, and K. Ando, Phys. Rev. Lett. 95, 086604 (2005). 10.1103/PhysRevLett.95.086604
23. L. Gao, X. Jiang, S. H. Yang, J. D. Burton, E. Y. Tsymbal, and S. S. P. Parkin, Phys. Rev. Lett. 99, 226602 (2007). 10.1103/PhysRevLett.99.226602
24. T. Umemura, M. Harada, K. Matsuda, and M. Yamamoto, Appl. Phys. Lett. 96, 252106 (2010). 10.1063/1.3456558
25. R. S. Liu, L. Michalak, C. M. Canali, L. Samuelson, and H. Pettersson, Nano Lett. 8, 848 (2008). 10.1021/nl072985p
26. R. J. Elliott, Phys. Rev. 96, 266 (1954); 10.1016/S0081-1947(08)60259-3
27. Y. Yafet, in Solid State Physics, edited by, F. Seitz, and, D. Turnbull, (Academic, New York, 1963), Vol. 14, p. 1.
28. O. D. Restrepo and W. Windl, e-print arXiv:1010.5436v2.
29. J. L. Cheng, M. W. Wu, and J. Fabian, Phys. Rev. Lett. 104, 016601 (2010). 10.1103/PhysRevLett.104.016601
30. W. Kipferl, M. Dumm, M. Rahm, and G. Bayreuther, J. Appl. Phys. 93, 7601 (2003). 10.1063/1.1555314
31. W. Wang, H. Sukegawa, and K. Inomata, Phys. Rev. B 82, 092402 (2010). 10.1103/PhysRevB.82.092402