Epitaxial strain-induced changes in the cation distribution and resistivity of Fe-doped CoFe 2O 4

Applied Physics Letters

Volumn 101, Issue 2, 2012, Pages

  Moyer, J A ^a,d   Kumah, D P ^a   Vaz, C A F ^b   Arena, D A ^c   Henrich, V E ^a  

^a Yale University   (United States)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATION DISTRIBUTIONS; COBALT FERRITES; DISTRIBUTION OF CATIONS; EPITAXIAL STRAIN; FE-DOPED; IRON DOPING; MGO; SRTIO; STRAIN RESULTS; STRAIN-INDUCED CHANGE; THEORETICAL CALCULATIONS;

EPITAXIAL GROWTH; SEMICONDUCTOR DOPING;

POSITIVE IONS;

EID: 84863923550     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4735233     Document Type: Article

References (21)

1. J. Cibert, J. F. Bobo, and U. Luders, C. R. Phys. 6, 977 (2005). 10.1016/j.crhy.2005.10.008
2. C. H. Ahn, A. Bhattacharya, M. Di Ventra, J. N. Eckstein, C. D. Frisbie, M. E. Gershenson, A. M. Goldman, I. H. Inoue, J. Mannhart, A. J. Millis, A. F. Morpurgo, D. Natelson, and J. M. Triscone, Rev. Mod. Phys. 78, 1185 (2006). 10.1103/RevModPhys.78.1185
3. G. Hu and Y. Suzuki, Phys. Rev. Lett. 89, 276601 (2002). 10.1103/PhysRevLett.89.276601
4. A. V. Ramos, M. J. Guittet, J. B. Moussy, R. Mattana, C. Deranlot, F. Petroff, and C. Gatel, Appl. Phys. Lett. 91, 122107 (2007). 10.1063/1.2787880
5. H. Zheng, J. Wang, S. E. Lofland, Z. Ma, L. Mohaddes-Ardabili, T. Zhao, L. Salamanca-Riba, S. R. Shinde, S. B. Ogale, F. Bai, D. Viehland, Y. Jia, D. G. Schlom, M. Wuttig, A. Roytburd, and R. Ramesh, Science 303, 661 (2004). 10.1126/science.1094207
6. C. A. F. Vaz, J. Hoffman, A. B. Posadas, and C. H. Ahn, Appl. Phys. Lett. 94, 022504 (2009). 10.1063/1.3069280
7. P. I. Slick, in Ferromagnetic Materials: A Handbook on the Properties of Magnetically Ordered Substances, edited by, E. P. Wohlfarth, (North-Holland Publishing Company, Amsterdam, 1980), Vol. 2, p. 189.
8. J. A. Moyer, C. A. F. Vaz, E. Negusse, D. A. Arena, and V. E. Henrich, Phys. Rev. B 83, 035121 (2011). 10.1103/PhysRevB.83.035121
9. J. A. Moyer, C. A. F. Vaz, D. A. Arena, D. Kumah, E. Negusse, and V. E. Henrich, Phys. Rev. B 84, 054447 (2011). 10.1103/PhysRevB.84.054447
10. G. A. Sawatzky, F. van der Woude, and A. H. Morrish, Phys. Rev. 187, 747 (1969). 10.1103/PhysRev.187.747
11. D. Fritsch and C. Ederer, Appl. Phys. Lett. 99, 081916 (2011). 10.1063/1.3631676
12. L. J. van der Pauw, Philips Res. Rep. 13, 1 (1958).
13. F. Rigato, J. Geshev, V. Skumryev, and J. Fontcuberta, J. Appl. Phys. 106, 113924 (2009). 10.1063/1.3267873
14. X. S. Gao, D. H. Bao, B. Birajdar, T. Habisreuther, R. Mattheis, M. A. Schubert, M. Alexe, and D. Hesse, J. Phys. D: Appl. Phys. 42, 175006 (2009). 10.1088/0022-3727/42/17/175006
15. F. M. F. de Groot, J. C. Fuggle, B. T. Thole, and G. A. Sawatzky, Phys. Rev. B 42, 5459 (1990). 10.1103/PhysRevB.42.5459
16. G. van der Laan and I. W. Kirkman, J. Phys.: Condens. Matter 4, 4189 (1992). 10.1088/0953-8984/4/16/019
17. L. E. Orgel, An Introduction to Transition-Metal Chemistry: Ligand-Field Theory (Methuen, London, 1966).
18. E. Stavitski and F. M. F. de Groot, Micron 41, 687 (2010). 10.1016/j.micron.2010.06.005
19. G. van der Laan, E. Arenholz, R. V. Chopdekar, and Y. Suzuki, Phys. Rev. B 77, 064407 (2008). 10.1103/PhysRevB.77.064407
20. 2) edge and by a Gaussian with a half-width of 0.34 eV.
21. B. Balko and G. R. Hoy, Physica B 86, 953 (1977). 10.1016/0378-4363(77) 90756-2