Synthesis and characterization of a p-type boron arsenide photoelectrode

Journal of the American Chemical Society

Volumn 134, Issue 27, 2012, Pages 11056-11059

  Wang, Shijun ^a   Swingle, Sarah F ^a   Ye, Heechang ^a   Fan, Fu Ren F ^a   Cowley, Alan H ^a   Bard, Allen J ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED POTENTIALS; FLAT BAND; INDIRECT BAND GAP; MOTT-SCHOTTKY PLOTS; P-TYPE; PHOTOELECTRODE; PHOTOPOTENTIAL; THIN LAYERS; VISIBLE LIGHT;

ARSENIC COMPOUNDS; CONVERSION EFFICIENCY; IRRADIATION; PHOTOELECTRONS; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BORON;

ARSINE DERIVATIVE; BORON ARSENIDE; UNCLASSIFIED DRUG;

ARTICLE; ELECTRODE; PHOTOELECTRODE; SYNTHESIS; ULTRAVIOLET IRRADIATION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84863839486     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja301765v     Document Type: Article

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