Atomic layer deposition of Ru thin film using N 2/H 2 plasma as a reactant

Thin Solid Films

Volumn 520, Issue 19, 2012, Pages 6100-6105

  Hong, Tae Eun ^a   Mun, Ki Yeung ^b   Choi, Sang Kyung ^b   Park, Ji Yoon ^b   Kim, Soo Hyun ^b   Cheon, Taehoon ^c   Kim, Woo Kyoung ^b   Lim, Byoung Yong ^d   Kim, Sunjung ^d  

^a Korea Basic Science Institute (KBSI)   (South Korea)

^b Yeungnam University   (South Korea)

^c Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^d University of Ulsan   (South Korea)

Author keywords

Atomic layer deposition; Copper metallization; Microstructure; N incorporation; Nitrogen hydrogen plasma; Ruthenium; Seed layer

Indexed keywords

COLUMNAR GRAIN STRUCTURE; COPPER METALLIZATION; CRYSTALLINITIES; DEPOSITION PARAMETERS; FAST NUCLEATION; N-INCORPORATION; NANOCRYSTALLINES; NITROGEN INCORPORATION; PLASMA POWER; POLYCRYSTALLINE; REACTANT GAS; RU FILM; RU THIN FILMS; SEED LAYER; SUBSTRATE TEMPERATURE;

ATOMIC LAYER DEPOSITION; COPPER; CRYSTAL MICROSTRUCTURE; GRAIN SIZE AND SHAPE; HYDROGEN; MICROSTRUCTURE; NITROGEN; OLEFINS; PLASMA DEPOSITION; RUTHENIUM; THIN FILMS; TOLUENE; VAPOR DEPOSITION;

NITROGEN PLASMA;

EID: 84863601202     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.05.069     Document Type: Article

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