Optical analysis of doped ZnO thin films using nonparabolic conduction-band parameters

Journal of Applied Physics

Volumn 111, Issue 12, 2012, Pages

  Kim, J S ^a,b   Jeong, J H ^a   Park, J K ^a   Baik, Y J ^a   Kim, I H ^a   Seong, T Y ^b   Kim, W M ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC DEFECTS; DECREASING FUNCTIONS; DENSITY DEPENDENT; DOPED ZNO THIN FILMS; DRUDE MODELS; EFFECTIVE MASS; ELECTRON TRANSPORT; FIRST-ORDER; HALL MEASUREMENTS; LINEAR RELATIONSHIPS; LORENTZ OSCILLATOR MODEL; NON PARABOLICITY; OPTICAL ANALYSIS; PLASMA ENERGY; REFLECTANCE SPECTRUM;

CARRIER CONCENTRATION; METALLIC FILMS; OPTICAL CORRELATION; OPTICAL FILMS; OPTICAL PROPERTIES;

HALL MOBILITY;

EID: 84863522668     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729571     Document Type: Article

References (41)

1. T. Minami, MRS Bull. 25, 38 (2000). 10.1557/mrs2000.149
2. R. G. Gordon, MRS Bull. 25, 52 (2000). 10.1557/mrs2000.151
3. K. Ellmer, J. Phys. D: Appl. Phys. 34, 3097 (2001). 10.1088/0022-3727/34/ 21/301
4. T. Minami, H. Sato, K. Ohashi, T. Tomofuji, and S. Takata, J. Cryst. Growth 117, 370 (1992). 10.1016/0022-0248(92)90778-H
5. D. L. Young, T. J. Coutts, V. I. Kaidanov, A. S. Gilmore, and W. P. Mulligan, J. Vac. Sci. Technol. A 18, 2978 (2000). 10.1116/1.1290372
6. A. V. Singh, R. M. Mehra, A. Yoshida, and A. Wakahara, J. Appl. Phys. 95, 3640 (2004). 10.1063/1.1667259
7. H. Fujiwara and M. Kondo, Phys. Rev. B 71, 075109 (2005). 10.1103/PhysRevB.71.075109
8. A. P. Roth, J. B. Webb, and D. F. Williams, Phys. Rev. B 25, 7836 (1982). 10.1103/PhysRevB.25.7836
9. T. Minami, H. Nanto, and S. Takata, Jpn. J. Appl. Phys. 24, L605 (1985). 10.1143/JJAP.24.L605
10. B. E. Sernelius, K.-F. Berggren, Z.-C. Jin, I. Hamberg, and C. G. Granqvist, Phys. Rev. B 37, 10244 (1988). 10.1103/PhysRevB.37.10244
11. Z.-C. Jin, I. Hamberg, and C. G. Granqvist, J. Appl. Phys. 64, 5117 (1988). 10.1063/1.342419
12. A. Sarkar, S. Ghosh, S. Chaudhuri, and A. K. Pal, Thin Solid Films 204, 255 (1991). 10.1016/0040-6090(91)90067-8
13. Y. Qu, T. A. Gessert, K. Ramanathan, R. G. Dhere, R. Noufi, and T. J. Coutts, J. Vac. Sci. Technol. A 11, 996 (1993). 10.1116/1.578582
14. S. Brehme, F. Fenske, W. Fuhs, E. Nebauer, M. Poschenrieder, B. Selle, and I. Sieber, Thin Solid Films 342, 167 (1999). 10.1016/S0040-6090(98)01490-4
15. H. Y. Xu, Y. C. Liu, R. Mu, C L. Shao, Y. M. Lu, D. Z. Shen, and X. W. Fan, Appl. Phys. Lett. 86, 123107 (2005). 10.1063/1.1884256
16. S. Major, A. Banerjee, and K. L. Chopra, Thin Solid Films 125, 179 (1985). 10.1016/0040-6090(85)90411-0
17. D. Mergel and Z. Qiao, J. Phys. D: Appl. Phys. 35, 794 (2002) 10.1088/0022-3727/35/8/311.
18. J. Steinhauser, S. Fa, N. Oliveira, E. Vallat-Sauvain, and C. Ballif, Appl. Phys. Lett. 90, 142107 (2007) 10.1063/1.2719158.
19. W. M. Kim, I. H. Kim, J. H. Ko, B. Cheong, T. S. Lee, K. S. Lee, D. Kim, and T.-Y. Seong, J. Phys. D: Appl. Phys. 41, 195409 (2008). 10.1088/0022-3727/ 41/19/195409
20. D. L. Young, T. J. Coutts, and V. I. Kaidanov, Rev. Sci. Instrum. 71, 462 (2000). 10.1063/1.1150224
21. Y. H. Kim, J. Jeong, K. S. Lee, B. Cheong, T.-Y. Seong, and W. M. Kim, Appl. Surf. Sci. 257, 109 (2010). 10.1016/j.apsusc.2010.06.045
22. I. H. Kim, K. S. Lee, T. S. Lee, J.-H. Jeong, B. Cheong, Y. J. Baik, and W. M. Kim, J. Appl. Phys. 100, 063701 (2006). 10.1063/1.2347715
23. T. Gerfin and M. Grtzel, J. Appl. Phys. 79, 1722 (1996). 10.1063/1.360960
24. M. Losurdo, Thin Solid Films 455-456, 301 (2004). 10.1016/j.tsf.2003.11. 196
25. I. Hamberg and C. G. Granquist, J. Appl. Phys. 59, 2950 (1986). 10.1063/1.336958
26. A. Pflug, V. Sittinger, F. Ruske, B. Szyszka, and G. Dittmar, Thin Solid Films 455-456, 201 (2004). 10.1016/j.tsf.2004.01.006
27. E. Shanthi, A. Banerjee, V. Dutta, and K. L. Chopra, J. Appl. Phys. 53, 1615 (1982). 10.1063/1.330619
28. C. R. Pidgeon, in Handbook on Semiconductors, edited by, M. Balkanashi, (North-Holland, Amsterdam, 1980), Vol. 2, p. 231.
29. E. C. Heltemes and H. L. Swinney, J. Appl. Phys. 38, 2387 (1967). 10.1063/1.1709891
30. E. Mollwo, in Landolt-Bornstein: Numerical Data and Functional Relationships in Science and Technology, edited by, K.-H. Hellwege, (Springer-Verlag, Berlin, 1982), Vol. 17, p. 53.
31. F. Simonis, M. van der Leji, and C. J. Hoogendoorn, Sol. Energy Mater. 1, 221 (1979). 10.1016/0165-1633(79)90040-6
32. T. Pisarkiewicz, K. Zakrzewska, and E. Leja, Thin Solid Films 174, 217 (1989). 10.1016/0040-6090(89)90892-4
33. K. Ellmer and R. Mientus, Thin Solid Films 516, 4620 (2008). 10.1016/j.tsf.2007.05.084
34. K. Ellmer and R. Mientus, Thin Solid Films 516, 5829 (2008). 10.1016/j.tsf.2007.10.082
35. K. Ellmer, in Transparent Conductive Zinc Oxide, edited by, K. Ellmer, A. Klein, and, B. Rech, (Springer, Berlin, 1982), Vol. 104, pp. 41-61.
36. R. J. Collins and D. A. Kleinman, J. Phys. Chem. Solids 11, 190 (1959). 10.1016/0022-3697(59)90213-6
37. J. D. Zook, Phys. Rev. 136, A869 (1964). 10.1103/PhysRev.136.A869
38. J. Bardeen and W. Shockley, Phys. Rev. 80, 72 (1950). 10.1103/PhysRev.80.72
39. D. L. Rode, Semicond. Semimetals 10, 1 (1975). 10.1016/S0080-8784(08) 60331-2
40. B. K. Meyer, J. Sann, D. M. Hofmann, C. Neumann, and A. Zeuner, Semicond. Sci. Technol. 20, S62 (2005). 10.1088/0268-1242/20/4/008
41. L. Sagalowicz and G. R. Fox, J. Mater. Res. 14, 1876 (1999). 10.1557/JMR.1999.0252