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Volumn 45, Issue 28, 2012, Pages

Enhanced formation of Ge nanocrystals in Ge:SiO 2 layers by swift heavy ions

(9) Antonova, I V a Skuratov, V A b Volodin, V A a,f Smagulova, S A c Marin, D M a,f Janse Van Vuuren, A d Neethling, J d Jedrzejewski, J e Balberg, I e

a ENERGY SYSTEMS INSTITUTE (Russian Federation)

b JOINT INSTITUTE FOR NUCLEAR RESEARCH (Russian Federation)

c NORTH EASTERN FEDERAL UNIVERSITY (Russian Federation)

d NELSON MANDELA METROPOLITAN UNIVERSITY (South Africa)

e HEBREW UNIVERSITY OF JERUSALEM (Israel)

f NOVOSIBIRSK STATE UNIVERSITY (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCEDURES; COSPUTTERING; FLUENCES; GE CONTENT; GE NANOCRYSTALS; HIGH CONCENTRATION; POSTIRRADIATION ANNEALING; PREIRRADIATION; ROOM TEMPERATURE; SWIFT HEAVY IONS; VISIBLE PHOTOLUMINESCENCE;

AMORPHOUS FILMS; IRRADIATION; NANOCRYSTALS; QUARTZ;

GERMANIUM;

EID: 84863510728 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/45/28/285302 Document Type: Article

Times cited : (7)

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