SEU tolerant memory using error correction code

IEEE Transactions on Nuclear Science

Volumn 59, Issue 1 PART 2, 2012, Pages 205-210

  She, Xiaoxuan ^a   Li, N ^b   Waileen Jensen, D ^c  

^a FUDAN UNIVERSITY   (China)

^b Gpix Inc   (United States)

^c ROCK Inc   (United States)

Author keywords

Error correction code; Hardened by design; Single event upset (SEU)

Indexed keywords

DELAY OVERHEADS; ERROR CORRECTION CODES; HARDENED BY DESIGN; MEMORY CELL; MEMORY DENSITY; SINGLE EVENT UPSETS; SMALL AREA;

HARDENING;

ERRORS;

EID: 84863397690     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2011.2176513     Document Type: Article

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