Graphene field effect transistor as radiation sensor

IEEE Nuclear Science Symposium Conference Record

Volumn , Issue , 2011, Pages 455-459

  Patil, A ^a   Koybasi, O ^b   Lopez, G ^c   Foxe, M ^d   Childres, I ^b   Roecker, C ^e   Boguski, J ^b   Gu, J ^b   Bolen, M L ^b   Capano, M A ^f   Jovanovic, I ^d   Ye, P ^b   Chen, Y P ^b   Bolen, M A ^b  

^a Canberra Industries Inc   (United States)

^b PURDUE UNIVERSITY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d The Pennsylvania State University   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; GAMMA RAYS; GRAPHENE; III-V SEMICONDUCTORS; MEDICAL IMAGING; RADIATION DETECTORS; RADIATION SHIELDING; SILICON CARBIDE; SILICON COMPOUNDS; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS; X RAY DETECTORS; X RAYS;

GRAPHENE FIELD-EFFECT TRANSISTORS; GRAPHENE FIELDEFFECT TRANSISTORS (GFET); HIGH SENSITIVITY; RADIATION SENSORS; RESISTANCE CHANGE; ROOM-TEMPERATURE OPERATION; SEMICONDUCTOR SUBSTRATE; TEMPORAL CHARACTERISTICS;

GRAPHENE TRANSISTORS;

EID: 84863376332     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NSSMIC.2011.6154538     Document Type: Conference Paper

References (6)

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3. F. Schedin et al., "Detection of individual gas molecules adsorbed on graphene", Nature Materials, vol. 6, no. 9, pp. 652-655, Sep.2007. (Pubitemid 47359547)
4. G. A. Lopez, "Graphene Field Effect Transistors for Applications in Radiation Detection," M.S. thesis, School of Electrical and Computer Engineering, Purdue Univ., West Lafayette, IN, 2010.
5. C. Sandow et. Al., "Clear-performance of linear DEPFET devices"Nuclear Instruments and Methods in Physics Research A 568, 176-180, 2006. (Pubitemid 44635938)
6. th ARI Grantees Conference, Alexandria VA, 2011