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Physical Review B - Condensed Matter and Materials Physics

Volumn 85, Issue 12, 2012, Pages

Evolution of electronic structure upon Cu doping in the topological insulator Bi2Se3

(12) Tanaka, Y a Nakayama, K a Souma, S a Sato, T a Xu, N b Zhang, P b Richard, P b Ding, H b Suzuki, Y c,d Das, P c,d Kadowaki, K c,d Takahashi, T a

a TOHOKU UNIVERSITY (Japan)

b INSTITUTE OF PHYSICS (China)

c UNIVERSITY OF TSUKUBA (Japan)

d JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84863373831 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.85.125111 Document Type: Article

Times cited : (41)

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