Modeling the underlying mechanisms for organic memory devices: Tunneling, electron emission, and oxygen adsorbing

Applied Physics Letters

Volumn 100, Issue 26, 2012, Pages

  Yao, Yao ^a   You, Yintao ^a   Si, Wei ^a   Wu, Chang Qin ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BISTABLES; DEVICE STRUCTURES; I - V CURVE; METALLIC ISLANDS; NEGATIVE DIFFERENTIAL RESISTANCE EFFECT; ORGANIC MEMORY DEVICES; SCATTERING OPERATORS; THEORETICAL MODELS; THEORETICAL STUDY; TUNNELING CURRENT; UNDERLYING MECHANISM;

OXYGEN;

CARRIER TRANSPORT;

EID: 84863321241     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4731879     Document Type: Article

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