Growth and scintillation properties of Pr doped Gd 3(Ga,Al) 5O 12 single crystals

Journal of Crystal Growth

Volumn 352, Issue 1, 2012, Pages 84-87

  Kamada, Kei ^a   Yanagida, Takayuki ^b   Pejchal, Jan ^c   Nikl, Martin ^c   Endo, Takanori ^a   Tsutumi, Kousuke ^a   Usuki, Yoshiyuki ^a   Fujimoto, Yutaka ^b   Fukabori, Akihiro ^b   Yoshikawa, Akira ^b,d  

^a FURUKAWA CO LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c INSTITUTE OF PHYSICS   (Czech Republic)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

A2. Single crystal growth; B1. Oxides; B2. Scintillator materials; B3. Scintillators

Indexed keywords

EMISSION INTENSITY; GARNET STRUCTURE; GROWN CRYSTALS; LIGHT YIELD; MICRO-PULLING DOWN; SCINTILLATION DECAY TIME; SCINTILLATION PROPERTIES; SCINTILLATOR MATERIALS;

ALUMINUM; GADOLINIUM; GALLIUM; SCINTILLATION; SCINTILLATION COUNTERS;

SINGLE CRYSTALS;

EID: 84863312578     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.02.002     Document Type: Conference Paper

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