Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors

Applied Physics Letters

Volumn 100, Issue 9, 2012, Pages

  Baek, David J ^a   Seol, Myeong Lok ^a   Choi, Sung Jin ^a   Moon, Dong Il ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STORAGE; DE-TRAPPING; DEVICE FABRICATIONS; DOUBLE-GATE; GATE VOLTAGES; GRAPHENE OXIDES; GRAPHITIC MATERIALS; NANO-GAP; NANOELECTRONIC APPLICATIONS; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; STRUCTURAL MODIFICATIONS; STRUCTURAL PLATFORM; THRESHOLD VOLTAGE SHIFTS;

FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; NANOWIRES; NONVOLATILE STORAGE;

CHARGE TRAPPING;

EID: 84863294845     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3690670     Document Type: Article

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