P-19: Effect of back channel passivation on the operation stability of solution-processed transparent oxide tfts and ring oscillators

Digest of Technical Papers - SID International Symposium

Volumn 42 1, Issue , 2011, Pages 1166-1169

  Kim, Yong Hoon ^a   Oh, Min Suk ^a   Kim, Kwang Ho ^b   Kim, Hyun Jae ^b   Han, Jeong In ^c   Park, Sung Kyu ^d  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Yonsei University   (South Korea)

^c Dongguk University   (South Korea)

^d Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

THIN FILM TRANSISTORS; TIN OXIDES;

ELECTRICAL STABILITY; OPERATION STABILITY; OSCILLATION FREQUENCY; PASSIVATION LAYER; RING OSCILLATOR; SOLUTION-PROCESSED; TRANSPARENT OXIDES; ZINC TIN OXIDE;

PASSIVATION;

EID: 84863196434     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3621033     Document Type: Conference Paper

References (5)

1. S.-H. K. Park, C.-S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J.-I. Lee, K. Lee, M. S. Oh, S. Im, "Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light-Emitting-Diode Display Panel," Adv. Mater. 21, 678-682, (2009).
2. Y. G. Mo, M. Kim, C. K. Kang, J. H. Jeong, Y. S. Park, C. G. Choi, H. D. Kim, S. S. Kim, "Amorphous Oxide TFT Backplane for Large Size AMOLED TVs," SID Symposium Digest 41, 1037-1040, (2010).
3. S. K. Park, Y. H. Kim, H. S. Kim, J. I. Han, "High Performance Solution-Processed and Lithographically Patterned Zinc-Tin Oxide Thin-Film Transistors with Good Operational Stability," Electrochem. Solid-State Lett. 12, H256-H258, (2009).
4. Y. H. Kim, K. H. Kim, M. S. Oh, H. J. Kim, J. I. Han, M. K. Han, S. K. Park, "Ink-jet printed zinc-tin-oxide thin film transistors and curcuits with rapid thermal annealing process," IEEE Electron. Dev. Lett. 31, 836-838, (2010).
5. J. K. Jeong, H. W. Yang, J. H. Jeong, Y.-G. Mo, H. D. Kim, "Origin of threshold voltage instability in indium-galliumzinc oxide thin film transistors," Appl. Phys. Lett. 93, 123508, (2008).