In2O3/CdS/CuInS2 thin-film solar cell with 9.7% efficiency

Japanese Journal of Applied Physics

Volumn 33, Issue 12B, 1994, Pages L1775-L1777

  Ogawa, Yoshitaka ^a   Jäger Waldau, Arnulf ^a   Hashimoto, Yoshio ^a   Ito, Kentaro ^a  

^a SHINSHU UNIVERSITY   (Japan)

Author keywords

CulnS2; KCN treatment; Metallic precursor; Sulfurization; Thin film solar cell

Indexed keywords

EID: 84863125503     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.L1775     Document Type: Article

References (13)

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13. As shown in refs. 8-10, the Cu/In concentration ratio .Rcu/In decreases after sulfurization of the Cu/In metallic precursor. When we sulfurize the precursor under the present conditions (i.e. 5% sulfur at 550°C for 4 hours), Rcu/In is shown as Rcu/in (sulfurized) = 1.21 Rcu/in (precursor)–0.11.