Field emission properties originated from 2D electronics gas successively tunneling for 1D heterostructures of ZnO nanobelts decorated with In 2O3 nanoteeth

Journal of Nanoparticle Research

Volumn 14, Issue 8, 2012, Pages

  Wang, B ^a   Jin, X ^a   Ouyang, Z B ^a   Xu, P ^a  

^a SHENZHEN UNIVERSITY   (China)

Author keywords

2D electronics gas; Energy band theory; Field emission properties; Nanosized heterostructures

Indexed keywords

BAND STRUCTURE; CATALYSTS; FIELD EMISSION; II-VI SEMICONDUCTORS; MICROMETERS; MORPHOLOGY; NANOBELTS; OXIDE MINERALS; PHASE INTERFACES; SILICON WAFERS; SINGLE CRYSTALS; TRANSPORT PROPERTIES; ZINC OXIDE;

ENERGY-BAND BENDING; FIELD EMISSION PROPERTY; FIELD-EMISSION CHARACTERISTICS; GROWTH MECHANISMS; SHAPED STRUCTURES; SINGLE CRYSTAL SILICON; THERMAL CHEMICAL VAPOR TRANSPORT; VAPOR-SOLID PROCESS;

INDIUM COMPOUNDS;

NANOPARTICLE; NANORIBBON; ZINC OXIDE;

ARTICLE; CHEMICAL STRUCTURE; ELECTRONICS; ENERGY; FIELD EMISSION; GAS; PARTICLE SIZE; PRIORITY JOURNAL; STRUCTURE ANALYSIS; SURFACE PROPERTY; TOOTH;

EID: 84863102583     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-012-1008-0     Document Type: Article

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