Improved performance of nanocrystal quantum dots-based LEDs by modifying hole transport layer

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 1, 2011, Pages 432-436

  Lee, Jihye ^a   Han, Chang Soo ^a   Jeong, Sohee ^a   Kang, Byoung Ho ^b   Hong, Seok Min ^b   Kim, Do Eok ^b   Kang, Shin Won ^b  

^a Korea Institute of Machine and Materials   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

HTL; LEDs; Nanocrystal; Quantum dot; TOPO TOP

Indexed keywords

ANNEALING CONDITION; ANNEALING TEMPERATURES; DEVICE CHARACTERISTICS; DEVICE EFFICIENCY; FABRICATION PROCESS; HOLE TRANSPORT LAYERS; HTL; LEDS; NANOCRYSTAL QUANTUM DOTS; PHOSPHINE OXIDE; SURFACE CAPPING; TOPO/TOP;

HOLE MOBILITY; LUMINANCE; MOLECULAR WEIGHT; NANOCRYSTALS; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

LIGHT EMITTING DIODES;

EID: 84863075591     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.3162     Document Type: Conference Paper

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