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Volumn 40, Issue 6, 2011, Pages 1623-1627
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Study on optoelectronic properties of Sn 1-xN xO 2
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Author keywords
First principles; Optoelectronic properties; Supercell SnO 2
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Indexed keywords
BAND GAPS;
DIELECTRIC FUNCTIONS;
DIRECT TRANSITION;
DOPING CONCENTRATION;
ENERGY RANGES;
FIRST-PRINCIPLES;
GRADIENT APPROXIMATION;
IMAGINARY PARTS;
LOCALIZED STATE;
LOWER ENERGIES;
N-DOPED;
OPTOELECTRONIC PROPERTIES;
RED SHIFT;
SUPER CELL;
TRANSITION PEAKS;
DENSITY FUNCTIONAL THEORY;
ELECTRONIC STRUCTURE;
ENERGY GAP;
OPTICAL PROPERTIES;
SEMICONDUCTOR DOPING;
TIN;
STRUCTURAL PROPERTIES;
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EID: 84863074452
PISSN: 1000985X
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (1)
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References (17)
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