-
1
-
-
0006483753
-
-
A. E. Yunovich, V. E. Kudrtashov, A. N. Turkin, A. Kovalev, and F. Manyakhin, MRS Int. J. Nitride Semicond. Res. 3, 44 (1998).
-
(1998)
MRS Int. J. Nitride Semicond. Res.
, vol.3
, pp. 44
-
-
Yunovich, A.E.1
Kudrtashov, V.E.2
Turkin, A.N.3
Kovalev, A.4
Manyakhin, F.5
-
2
-
-
0038636161
-
-
10.1063/1.1570515
-
I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, M. J. Kappers, and C. J. Humpherys, Appl. Phys. Lett. 82, 2755 (2003). 10.1063/1.1570515
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 2755
-
-
Pope, I.A.1
Smowton, P.M.2
Blood, P.3
Thomson, J.D.4
Kappers, M.J.5
Humpherys, C.J.6
-
5
-
-
78650917139
-
-
10.1063/1.3531753
-
C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. yang, H. C. Kuo, T. C. Lu, Appl. Phys. Lett. 97, 261103 (2010). 10.1063/1.3531753
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 261103
-
-
Wang, C.H.1
Ke, C.C.2
Lee, C.Y.3
Chang, S.P.4
Chang, W.T.5
Li, J.C.6
Li, Z.Y.7
Yang, H.C.8
Kuo, H.C.9
Lu, T.C.10
-
6
-
-
67649126477
-
-
10.1063/1.3153508
-
S. H. Han, D. Y. Lee, S. J. Lee, C. Y. Cho, M. K. Kwon, S. P. Lee, D. Y. Noh, D. J. Kim, Y. C. Kim, and S. J. Park, Appl. Phys. Lett. 94, 231123 (2009). 10.1063/1.3153508
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 231123
-
-
Han, S.H.1
Lee, D.Y.2
Lee, S.J.3
Cho, C.Y.4
Kwon, M.K.5
Lee, S.P.6
Noh, D.Y.7
Kim, D.J.8
Kim, Y.C.9
Park, S.J.10
-
7
-
-
52949131872
-
-
10.1063/1.2988324
-
J. Xie, X. Ni, Q. Fan, R. Shimada,. zgr, and H. Morkoc, Appl. Phys. Lett. 93, 121107 (2008). 10.1063/1.2988324
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 121107
-
-
Xie, J.1
Ni, X.2
Fan, Q.3
Shimada, R.4
Zgr5
Morkoc, H.6
-
9
-
-
35148864428
-
Auger recombination in InGaN measured by photoluminescence
-
DOI 10.1063/1.2785135
-
Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 91, 141101 (2007). 10.1063/1.2785135 (Pubitemid 47534188)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.14
, pp. 141101
-
-
Shen, Y.C.1
Mueller, G.O.2
Watanabe, S.3
Gardner, N.F.4
Munkholm, A.5
Krames, M.R.6
-
10
-
-
37149027248
-
Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A cm2
-
DOI 10.1063/1.2807272
-
N. F. Gardner, G. O. Mueller, Y. C. Shen, G. Chen, S. Watanabe, W. Gotz, and M. R. Krames, Appl. Phys. Lett. 91, 243506 (2007). 10.1063/1.2807272 (Pubitemid 350262046)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.24
, pp. 243506
-
-
Gardner, N.F.1
Muller, G.O.2
Shen, Y.C.3
Chen, G.4
Watanabe, S.5
Gotz, W.6
Krames, M.R.7
-
11
-
-
0033309549
-
-
10.1143/JJAP.38.3976
-
T. Mukai, M. Yamada, and S. Nakamura, Jpn. J. Appl. Phys., Part 1 38, 3976 (1999). 10.1143/JJAP.38.3976
-
(1999)
Jpn. J. Appl. Phys., Part 1
, vol.38
, pp. 3976
-
-
Mukai, T.1
Yamada, M.2
Nakamura, S.3
-
12
-
-
33846793001
-
Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers
-
DOI 10.1109/LPT.2005.860045
-
J. Piprek, R. Farrell, S. DenBaars, and S. Nakamura, IEEE Photonics Technol. Lett. 18, 7 (2006). 10.1109/LPT.2005.860045 (Pubitemid 46542475)
-
(2006)
IEEE Photonics Technology Letters
, vol.18
, Issue.1
, pp. 7-9
-
-
Piprek, J.1
Farrell, R.2
DenBaars, S.3
Nakamura, S.4
-
13
-
-
34548287006
-
Achieving ambipolar vertical organic transistors via nanoscale interface modification
-
DOI 10.1063/1.2773749
-
M. H. Kim, M. F. Shubert, Q. Dai, J. K. Kim, E. F. Shubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 91, 83507 (2007). 10.1063/1.2773749 (Pubitemid 47319004)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.8
, pp. 083507
-
-
Li, S.-H.1
Xu, Z.2
Ma, L.3
Chu, C.-W.4
Yang, Y.5
-
14
-
-
60049085306
-
-
10.1109/JSTQE.2009.2014406
-
M. H. Kim, W. Lee, D. Zhu, M. F. Schubert, J. K. Kim, E. F. Schubert, and Y. Park, IEEE J. Sel. Top. Quantum Electron. 15, 1 (2009). 10.1109/JSTQE.2009. 2014406
-
(2009)
IEEE J. Sel. Top. Quantum Electron.
, vol.15
, pp. 1
-
-
Kim, M.H.1
Lee, W.2
Zhu, D.3
Schubert, M.F.4
Kim, J.K.5
Schubert, E.F.6
Park, Y.7
-
15
-
-
79956006094
-
-
10.1063/1.1493229
-
F. Renner, P. Kiesel, G. H. Dhler, M. Kneissl, C. G. Van de Walle, and N. M. Johnson, Appl. Phys. Lett. 81, 490 (2002). 10.1063/1.1493229
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 490
-
-
Renner, F.1
Kiesel, P.2
Dhler, G.H.3
Kneissl, M.4
Van De Walle, C.G.5
Johnson, N.M.6
-
16
-
-
55149108812
-
-
10.1063/1.3012388
-
X. Ni, Q. Fan, R. Shimada,. zgr, and H. Morkoc, Appl. Phys. Lett. 93, 171113 (2008). 10.1063/1.3012388
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 171113
-
-
Ni, X.1
Fan, Q.2
Shimada, R.3
Zgr4
Morkoc, H.5
-
17
-
-
38949146387
-
Carrier distribution in (0001) InGaNGaN multiple quantum well light-emitting diodes
-
DOI 10.1063/1.2839305
-
A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. K. Krames, Appl. Phys. Lett. 92, 053502 (2008). 10.1063/1.2839305 (Pubitemid 351230052)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.5
, pp. 053502
-
-
David, A.1
Grundmann, M.J.2
Kaeding, J.F.3
Gardner, N.F.4
Mihopoulos, T.G.5
Krames, M.R.6
-
18
-
-
35648955103
-
Defect related issues in the 'current roll-off' in InGaN based light emitting diodes
-
DOI 10.1063/1.2801704
-
B. Monemar and B. E. Sernelins, Appl. Phys. Lett. 91, 181103 (2007). 10.1063/1.2801704 (Pubitemid 350037159)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.18
, pp. 181103
-
-
Monemar, B.1
Sernelius, B.E.2
-
19
-
-
77955195692
-
-
10.1109/LPT.2009.2037827
-
C. H. Wang, J. R. Chen, C. H. Chiu, H. C. Kuo, Y. L. Li, T. C. Lu, and S. C. Wang, IEEE Photonics Technol. Lett. 22, 236 (2010). 10.1109/LPT.2009.2037827
-
(2010)
IEEE Photonics Technol. Lett.
, vol.22
, pp. 236
-
-
Wang, C.H.1
Chen, J.R.2
Chiu, C.H.3
Kuo, H.C.4
Li, Y.L.5
Lu, T.C.6
Wang, S.C.7
-
20
-
-
78649231848
-
-
10.1063/1.3520139
-
J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, Appl. Phys. Lett. 97, 201112 (2010). 10.1063/1.3520139
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 201112
-
-
Wang, J.1
Wang, L.2
Zhao, W.3
Hao, Z.4
Luo, Y.5
-
21
-
-
60349114909
-
-
10.1063/1.3081059
-
K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 94. 061116 (2009). 10.1063/1.3081059
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 061116
-
-
Vampola, K.J.1
Iza, M.2
Keller, S.3
Denbaars, S.P.4
Nakamura, S.5
-
22
-
-
73649117829
-
-
10.1063/1.3272679
-
J. H. Song, H. J. Kim, B. J. Ahn, Y. Q. Dong, S. Y. Hong, J. H. Song, Y. B. Moon, H. K. Yuh, S. C. Choi, and S. K. Shee, Appl. Phys. Lett. 95. 263503 (2009). 10.1063/1.3272679
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 263503
-
-
Song, J.H.1
Kim, H.J.2
Ahn, B.J.3
Dong, Y.Q.4
Hong, S.Y.5
Song, J.H.6
Moon, Y.B.7
Yuh, H.K.8
Choi, S.C.9
Shee, S.K.10
-
23
-
-
77957891166
-
-
10.1002/pssa.201026149
-
J. Piprk, Phys. Status Solidi A 207, 2217 (2010). 10.1002/pssa.201026149
-
(2010)
Phys. Status Solidi A
, vol.207
, pp. 2217
-
-
Piprk, J.1
-
24
-
-
77956208475
-
-
10.1002/pssr.201004147
-
X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin,. zgr, H. Morko, A. Matulionis, T. Paskova, H. Mulholland, Phys. Status Solidi RRL 4 (8/9), 194 (2010). 10.1002/pssr.201004147
-
(2010)
Phys. Status Solidi RRL
, vol.4
, Issue.8-9
, pp. 194
-
-
Ni, X.1
Li, X.2
Lee, J.3
Liu, S.4
Avrutin, V.5
Zgr6
Morko, H.7
Matulionis, A.8
Paskova, T.9
Mulholland, H.10
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