Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles

Optics Express

Volumn 20, Issue 3, 2012, Pages 2116-2123

  Jang, Lee Woon ^a   Jeon, Dae Woo ^a   Sahoo, Trilochan ^a   Jo, Dong Seob ^a   Ju, Jin Woo ^b   Lee, Seung Jae ^b   Baek, Jong Hyeob ^b   Yang, Jin Kyu ^c   Song, Jung Hoon ^c   Polyakov, Alexander Y ^a   Lee, In Hwan ^a  

^a Chonbuk National University   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

^c Kongju National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; GALLIUM NITRIDE; NANOPARTICLES; OPTICAL PROPERTIES; PLASMONS; SURFACE PLASMON RESONANCE;

ELECTRICAL FIELD; GAN LAYERS; INGAN/GAN; INGAN/GAN QUANTUM WELL; LOCALIZED SURFACE PLASMON; MULTIQUANTUM WELLS; NANO LAYERS; OA BANDS; PHOTOLUMINESCENCE INTENSITIES; STRONG COUPLING; TIME-RESOLVED;

SEMICONDUCTOR QUANTUM WELLS;

METAL NANOPARTICLE;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ENERGY TRANSFER; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LIGHT; RADIATION SCATTERING; SURFACE PLASMON RESONANCE; THEORETICAL MODEL; ULTRASTRUCTURE;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; ENERGY TRANSFER; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHT; METAL NANOPARTICLES; MODELS, THEORETICAL; SCATTERING, RADIATION; SURFACE PLASMON RESONANCE;

EID: 84863012184     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.002116     Document Type: Article

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