Itinerant ferromagnetism and geometrically suppressed metal-insulator transition in epitaxial thin films of Ca 2RuO 4

Applied Physics Letters

Volumn 100, Issue 5, 2012, Pages

  Miao, Ludi ^a   Silwal, Punam ^a   Zhou, Xiaolan ^a   Stern, Ilan ^a   Peng, Jin ^a   Zhang, Wenyong ^a   Spinu, Leonard ^b   Mao, Zhiqiang ^a   Ho Kim, Dae ^a  

^a Tulane University   (United States)

^b UNIVERSITY OF NEW ORLEANS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC MAGNETORESISTANCE; ANTIFERROMAGNETIC INSULATORS; ELECTRICAL AND MAGNETIC PROPERTY; EPITAXIAL STRAIN; EPITAXIAL THIN FILMS; FERROMAGNETIC GROUND STATE; FERROMAGNETIC METAL; HIGH QUALITY; IN-PLANE RESISTIVITY; ITINERANT FERROMAGNETISM; LOW TEMPERATURES; PHASE CO-EXISTENCE; SYMMETRY ANALYSIS;

ANTIFERROMAGNETISM; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GROUND STATE; MAGNETIC PROPERTIES; RUTHENIUM ALLOYS; RUTHENIUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES;

EPITAXIAL FILMS;

EID: 84863011879     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3680250     Document Type: Article

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