Near-infrared electroluminescence in ErYb silicate based light-emitting device

Optical Materials

Volumn 34, Issue 8, 2012, Pages 1371-1374

  Wang, B ^a,b   Guo, R M ^a   Wang, X J ^a   Wang, L ^a   Hong, L Y ^a   Yin, B ^a   Gao, L F ^a   Zhou, Z ^a  

^a PEKING UNIVERSITY   (China)

^b NATIONAL INSTITUTE OF METROLOGY   (China)

Author keywords

Electroluminescence; ErYb silicate; Impact excitation

Indexed keywords

BINARY ALLOYS; CURRENT DENSITY; ELECTRIC EXCITATION; ELECTRIC FIELDS; ELECTROLUMINESCENCE; HOT ELECTRONS; INFRARED DEVICES; LIGHT; LIGHT EMISSION; METAL INSULATOR BOUNDARIES; MIS DEVICES; SILICATES; YTTERBIUM ALLOYS;

CONDUCTION MECHANISM; ERYB SILICATES; HIGH ELECTRIC FIELDS; IMPACT EXCITATION; LIGHT EMITTING DEVICES; METAL-INSULATOR-SEMICONDUCTORS; SILICON SUBSTRATES; SILICON TECHNOLOGIES;

ERBIUM ALLOYS;

EID: 84862810419     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2012.02.026     Document Type: Article

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