First-principles investigation of electronic structure and transport properties of the filled skutterudite LaFe 4Sb 12 under different pressures

Chemical Physics Letters

Volumn 529, Issue , 2012, Pages 45-48

  Xu, Bin ^a   Long, Congguo ^a   Wang, Yusheng ^a   Yi, Lin ^b  

^a NORTH CHINA INSTITUTE OF WATER CONSERVANCY AND HYDROELECTRIC POWER   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; ELECTRICAL TRANSPORT PROPERTIES; ELECTRONIC CONDUCTIVITY; FILLED-SKUTTERUDITE; FIRST-PRINCIPLES INVESTIGATIONS; HIGH PRESSURE; LEVEL SHIFT; N-DOPED; N-DOPING; PEAK VALUES;

CALCULATIONS; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; HIGH PRESSURE ENGINEERING; LANTHANUM ALLOYS; PHOSPHORUS; SKUTTERUDITES; TRANSPORT PROPERTIES;

ANTIMONY COMPOUNDS;

EID: 84862797958     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2012.01.053     Document Type: Article

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