SCOPUS 정보 검색 플랫폼

Volumn 102, Issue , 2012, Pages 15-18

ZnO/ZnSe type II core-shell nanowire array solar cell

(9) Zhang, Yong a,c Wu, Zhiming b Zheng, Jinjian b Lin, Xiangan b Zhan, Huahan b Li, Shuping b Kang, Junyong b Bleuse, Joel c Mariette, Henri c

a University of North Carolina at Charlotte (United States)

b XIAMEN UNIVERSITY (China)

c CEA GRENOBLE (France)

Author keywords

High bandgap semiconductors; Low effective bandgap; Sensitized solar cell; Time resolved PL; Type II heterostructure; ZnO ZnSe nanowire array

Indexed keywords

ABSORBER MATERIAL; CORE-SHELL NANOWIRES; CORE/SHELL; HIGH BANDGAP; JUNCTION AREA; LIGHT-TRAPPING; NANOWIRE ARRAYS; NEW OPTIONS; PHOTORESPONSES; STRONG ENHANCEMENT; TIME-RESOLVED; TIME-RESOLVED PHOTOLUMINESCENCE; TYPE II; TYPE II HETEROJUNCTION; ZNO;

ENERGY GAP; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; PHOTOLUMINESCENCE;

NANOWIRES;

EID: 84862789999 PISSN: 09270248 EISSN: None Source Type: Journal
DOI: 10.1016/j.solmat.2011.12.015 Document Type: Article

Times cited : (51)

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