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Materials Letters

Volumn 73, Issue , 2012, Pages 89-91

Deposition of Cu 2ZnSnS 4 thin films by vacuum thermal evaporation from single quaternary compound source

(5) Shi, Chengwu a,b Shi, Gaoyang a,b Chen, Zhu a,b Yang, Pengfei a,b Yao, Min a,b

a HEFEI UNIVERSITY OF TECHNOLOGY (China)

b INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

Author keywords

Cu 2ZnSnS 4; Solar energy materials; Thin film; Vacuum thermal evaporation

Indexed keywords

AMORPHOUS STATE; CRYSTALLINE STATE; DIRECT BAND GAP; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FILL FACTOR; HALL MEASUREMENTS; HIGH PURITY; HOMOGENEOUS SURFACES; KESTERITES; P-TYPE CONDUCTIVITY; PHOTOVOLTAIC DEVICES; QUATERNARY COMPOUND; SCANNING ELECTRON MICROSCOPES; SEMICONDUCTING MATERIALS; SOLAR ENERGY MATERIALS; UV-VIS-NIR; VACUUM THERMAL EVAPORATION;

ANNEALING; CONVERSION EFFICIENCY; CRYSTALLINE MATERIALS; INFRARED DEVICES; OPEN CIRCUIT VOLTAGE; SCANNING ELECTRON MICROSCOPY; THIN FILMS; TIN; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

VAPOR DEPOSITION;

EID: 84862786233 PISSN: 0167577X EISSN: None Source Type: Journal
DOI: 10.1016/j.matlet.2012.01.018 Document Type: Article

Times cited : (114)

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