The origin of sub-bands in the Raman D-band of graphene

Carbon

Volumn 50, Issue 11, 2012, Pages 4252-4258

  Luo, Zhiqiang ^a   Cong, Chunxiao ^a   Zhang, Jun ^a   Xiong, Qihua ^a   Yu, Ting ^a,b,c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c National University of Singapore   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BROADENING PARAMETERS; DEFECT CONCENTRATIONS; DOUBLE RESONANCE; ENERGY DEPENDENT; INNER PROCESS; PHOTOEXCITED CARRIERS; RAMAN D-BAND; RAMAN STUDIES; SCATTERING PROCESS; SCATTERING RATES; SUBSTRATE DOPING;

DEFECTS; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCATTERING;

GRAPHENE;

EID: 84862765635     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2012.05.008     Document Type: Article

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