SCOPUS 정보 검색 플랫폼

Volumn 100, Issue 18, 2012, Pages

Defect chemistry of Ti-doped antiferroelectric Bi0.85Nd 0.15FeO3

(10) Reaney, Ian M a MacLaren, Ian b Wang, Liqiu b Schaffer, Bernhard b,c,d Craven, Alan b Kalantari, Kambiz a Sterianou, Iasmi a Miao, Shu a,e Karimi, Sarah a,f Sinclair, Derek C a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b UNIVERSITY OF GLASGOW (United Kingdom)

c SUPERSTEM LABORATORY (United Kingdom)

d GATAN INC (United States)

e DALIAN INSTITUTE OF CHEMICAL PHYSICS (China)

f JOHNSON MATTHEY TECHNOLOGY CENTRE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IRON COMPOUNDS; PEROVSKITE; SCANNING ELECTRON MICROSCOPY;

ABERRATION-CORRECTED SCANNING TRANSMISSION ELECTRON MICROSCOPIES; ANTI FERROELECTRICS; CHARGE COMPENSATION; DEFECT CHEMISTRY; IONIC COMPENSATION; LOW CONCENTRATIONS; PEROVSKITE LATTICE; TI DOPED;

NEODYMIUM COMPOUNDS;

EID: 84862564319 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4705431 Document Type: Article

Times cited : (31)

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