Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

Applied Physics Letters

Volumn 78, Issue 5, 2001, Pages 679-

  Chichibu, S F ^a   Wada, K ^b   Mullhauser J ^c   Brandt, O ^c   Ploog, K H ^c   Mizutani, T ^d   Setoguchi, A ^d   Nakai, R ^d   Sugiyama, M ^d   Nakanishi, H ^d   Torii, K ^e   Deguchi, T ^e   Sota, T ^e   Nakamura, S ^f  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^d TOKYO UNIVERSITY OF SCIENCE   (Japan)

^e WASEDA UNIVERSITY   (Japan)

^f NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84862352586     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1343504     Document Type: Erratum

References (0)