Increase of boron precipitation in nanostructured P-type silicon germanium thermoelectric alloys

2012 IEEE Green Technologies Conference

Volumn , Issue , 2012, Pages

  Gao, Zhaihui ^a   Zamanipour, Zahra ^a   Vashaee, Daryoosh ^a  

^a OKLAHOMA STATE UNIVERSITY   (United States)

Author keywords

boron precipitation; carrier concentration; nanostructured Silicon Germanium; Thermoelectric

Indexed keywords

NANO-STRUCTURED; NANOSTRUCTURED SILICON; P-TYPE SILICON; SI1-XGEX; SILICON-GERMANIUM ALLOYS; THEORETICAL MODELING; THERMOELECTRIC; THERMOELECTRIC ALLOYS; THERMOELECTRIC PROPERTIES;

BICMOS TECHNOLOGY; CARRIER CONCENTRATION; GERMANIUM ALLOYS; TECHNOLOGY; X RAY DIFFRACTION ANALYSIS;

BORON;

EID: 84862333077     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GREEN.2012.6200978     Document Type: Conference Paper

References (5)

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4. V.S. Shukla and D.M.Rowe, "Precipitation of Boron from Silicon-Germanium Alloy and its Effect in the Thermoelectric Transport Properties," Phys. stat. sol. (a) 66, 243, 1981.
5. I. M. Lifshitz and V. V. Slyozov, "The kinetics of precipitation from supersaturated solid solutions", J. Phys. Chem. Solids 19, 35, 1961.